image sensor for dwdm wavelength monitor g9201 to g9204 series ingaas linear image sensors www.hamamatsu.com 1 the g9201 to g9204 series are ingaas linear image sensors designed for wdm monitor detectors in optical communications. these linear image sensors contain a cmos charge ampli er array, a cds circuit, an offset compensation circuit, a shift register and a timing generator, along with an ingaas photodiode array, and deliver high sensitivity and stable operation in the near in - frared range. the package is hermetically sealed for high reliability and the light input window has an anti-re ective coating to improve the light detection ef ciency. the signal processing circuit on the cmos chip allows selecting two conversion ef ciencies (ce) by external voltage. a wide dy- namic range can be obtained when the image sensor is operated at ce=16 nv/e - , while a high gain can be obtained at ce=320 nv/e - . applications options dwdm wavelength monitor ingaas multichannel detector head c8061-01 * 3 optical spectrum analyzer multichannel detector head controller c7557-01 * 3 features wide dynamic range cds circuit* 1 low noise and low dark current offset compensation circuit two selectable conversion ef ciencies simple operation (by built-in timing generator * 2 ) anti-saturation circuit high resolution: 25 m pitch (512 ch) low crosstalk 256 ch: 1 video line 512 ch: 2 video lines selection guide type no. cooling image size number of total pixels number of effective pixels spectral response range defective pixels appilcable multichannel detector head (mm) ( m) g9201-256s one-stage te-cooled 12.8 0.25 256 256 0.9 to 1.67 (-10 c) 0 c8061-01 g9202-512s one-stage te-cooled 512 512 0.9 to 1.67 (-10 c) c8061-01 g9203-256d* 4 non-cooled 12.8 0.50 256 256 0.9 to 1.7 (25 c) - g9203-256s one-stage te-cooled 256 256 0.9 to 1.67 (-10 c) c8061-01 g9204-512d* 4 non-cooled 512 512 0.9 to 1.7 (25 c) - g9204-512s one-stage te-cooled 512 512 0.9 to 1.67 (-10 c) c8061-01 * 1: a major source of noise in charge ampli ers is the reset noise generated when the integration capacitance is reset. a cds circuit greatly reduces this reset noise by holding the signal immediately after reset to nd the noise differential. * 2: in conventional image sensor operation, external pld (programmable logic device), etc. is used to input the required timing signals. however, the g9201 to g9204 series image sensors internally generate all timing signals on the cmos chip just by supplying clk and reset pulses. this makes it simple to set the timings. * 3: the g9203-256d and g9204-512d are not available for the c7557-01.
ingaas linear image sensors g9201 to g9204 series 2 kmirc0040ea kmirc0033ea details of photosensitive area (unit: mm) block diagram h x v 256 number of pixels 30 x 512 50 10 25 h 250 500 250 500 v timing generator clk thermoelectric cooler + thermoelectric cooler - temperature monitor video ad-trig reset vdd vss inp vref bias generator shift register address switch charge amp + sample-and-hold circuit ingaas photodiode array readout circuit cmos ic absolute maximum ratings parameter symbol condition min. max. unit operating temperature topr chip and package temperature, no dew condensation * 5 -40 +70 c storage temperature tstg chip and package temperature, no dew condensation * 5 -40 +85 c supply voltage vdd, inp, vref ta=25 c -0.3 +6 v clock pulse voltage v ta=25 c -0.3 +6 v reset pulse voltage v(res) ta=25 c -0.3 +6 v gain selection terminal voltage vcsel ta=25 c -0.3 +6 v * 5: when there is a temperature difference betw een a product and the surrounding area in hi gh humidity environment, dew condensatio n may occur on the product surface. dew condensation on the prod uct may cause deterioration in characteristics and reliability. note: exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. always be sure to use the product within the absolute maximum ratings. type no. pixel size [m (h) m (v)] pixel pitch (m) package window material g9201-256s 50 250 50 28-pin metal (refer to the dimensional outline) sapphire glass with anti-re ective coating g9202-512s 25 250 25 g9203-256d* 4 50 500 50 22-pin ceramic borosilicate glass with anti-re ective coating g9203-256s 28-pin metal (refer to the dimensional outline) sapphire glass with anti-re ective coating g9204-512d* 4 25 500 25 22-pin ceramic borosilicate glass with anti-re ective coating g9204-512s 28-pin metal (refer to the dimensional outline) sapphire glass with anti-re ective coating * 4: for the g9203-256d and g9204-512d speci cations, see the separate datasheet available from hamamatsu. structure
ingaas linear image sensors g9201 to g9204 series 3 electrical characteristics (ta=25 c) parameter symbol min. typ. max. unit consumption current i(vdd) 256 pixels -4 55 0 ma 512 pixels - 90 100 i(vref) - - 1 ma i(inp) - - 1 ma clock frequency f 0.1 - 4 mhz video data rate fv 0.0125 f/8 0.5 mhz video output voltage high v h - 4.5 inp v low v l vref 1.26 - v output offset voltage vos - vref - v a/d trigger voltage high vtrig h - vdd - v low vtrig l - gnd - v wavelength (m) photosensitivity (a/w) 0.8 1.0 1.2 1.4 1.6 1.8 0 0.6 0.8 0.2 0.4 1.0 (typ.) td=25 c td=-10 c spectral response kmirb0049eb spectral transmittance characteristic of window material (typical example) wavelen g th ( m ) transmittance (%) 70 80 90 100 (ta=25 c) 0.8 1.0 1.2 1.4 1.6 1.8 recommended terminal voltage parameter symbol min. typ. max. unit supply voltage vdd 4.9 5.0 5.1 v vref - 1.26 - v element bias inp 3.5 4.5 4.6 v ground vss - 0 - v clock pulse voltage high v vdd - 0.5 vdd vdd + 0.5 v low 0 0 0.4 reset pulse voltage high v(res) vdd - 0.5 vdd vdd + 0.5 v low 0 0 0.4 kmirb0011eb
ingaas linear image sensors g9201 to g9204 series 4 dark output characteristics (td=25 c, ce=16 nv/e - ) parameter symbol min. typ. max. unit dark output (dark output nonuniformity) g9201-256s v d -1 0.2 1 v/s g9202-512s -0.5 0.1 0.5 g9203-256s -2 0.4 2 g9204-512s -0.5 0.1 0.5 dark current g9201-256s i d -10 2 10 pa g9202-512s -5 1 5 g9203-256s -20 4 20 g9204-512s -5 1 5 kmirb0069ea linearity error (g9203-256s) electrical and optical characteristics (td=25 c) parameter symbol condition min. typ. max. unit peak sensitivity wavelength p - 1.55 - m photosensitivity s = p 0.85 0.95 - a/w conversion ef ciency ce cf=10pf - 16 - nv/e - saturation voltage vsat 3.0 3.2 - v saturation charge qsat * 6 30 32 - pc photoresponse nonuniformity prnu * 7 - 2 5% rms noise voltage (readout noise) n standard deviation, integration count=50 - 180 300 v rms dynamic range d * 6 10000 17777 - - defective pixels * 8 -- - 0 % * 6: v =5 v, ce=16 nv/e - * 7: 50 % of saturation, integration time=10 ms, after dark output subtraction, excluding rst and last pixels * 8: pixels with photoresponse nonuniformity, readout noise or dark current higher than the maximum value output voltage (mv) 1 10 100 1000 10000 -50 -40 -30 -20 -10 0 10 20 (typ. td=-10 c, vdd=5 v, inp=4.5 v, vref=1.26 v, ce=16 nv/e - , f=250 khz) linearity error (%)
ingaas linear image sensors g9201 to g9204 series 5 t1 tr (res) clk reset ad_trig video tf (res) tr (clk) tf (clk) t3 blank period (10 d m p d l t p s n p s f
t2 1 ch readout time last ch readout time 2 ch readout time actual integration time set integration time output reset parameter symbol min. typ. max. unit clock pulse frequency - 0.1 - 4 mhz clock pulse width tpw (clk) 100 - - ns clock pulse rise/fall times tr (clk), tf (clk) 0 20 100 ns reset pulse width tpw (res) 6000 - - ns reset pulse rise/fall times tr (res), tf (res) 0 20 100 ns reset (rise) timing t1 50 - - ns reset (fall) timing t2 50 - - ns output settling time t3 - - 600 ns timing chart kaccc0224eb equivalent circuit cds 1 pixel inp shift register offset compensation circuit video ad-trig low gain high gain kmirc0010ed timing generator clk external input reset vref vss vdd photodiode kmirc0010ed
ingaas linear image sensors g9201 to g9204 series 6 dimensional outline (unit: mm) kmira0010ec basic circuit connection vss inp cf_select vdd reset ingaas linear image sensor clk video ad_trig vref buffer amp buffer amp kmirc0012ea 12 14 28 r 1.59 2.54 0.15 15 10.2 0.15 3.0 0.15 25.4 0.15 22.9 0.15 63.5 0.15 53.3 0.15 38.1 0.15 35.6 0.15 20.3 0.15 2.54 0.15 0.45 0.05 index mark active area (left side 1ch) photosensitive surface 1.0 0.2 6.4 1 center accuracy of active area: 0.3 mm or less (with package center as reference point) rotation accuracy of active area: 2 or less (with package center as reference point) chip material: ingaas package material: feni alloy lead treatment: ni/au plating lead material: fenico alloy window material: sapphire refractive index of window material: n=1.76 window material thickness: 0.66 mm ar coat: coated (1.55 m peak) window sealing method: brazing cap sealing: welding 27.2 0.15 6.15 0.2 5.8 0.2 3.4 0.3
ingaas linear image sensors g9201 to g9204 series 7 pin connections (top view) te + therm therm case reset te - vdd vss inp clk vref video cf select ad-trig 256 pixels 512 pixels te + therm therm case reset-odd te - vdd vss inp clk-odd vref video-odd cf select ad-trig-odd reset-even ad-trig-even clk-even video-even kmirc0013ea terminal name input/output function and recommended connection clk input (cmos logic compatible) clock pulse for operating the cmos shift register reset input (cmos logic compatible) reset pulse for initializing the feedback capacitance in the charge ampli er formed on the cmos chip. the width of the reset pulse is integration time. vdd input supply voltage for operating the signal processing circuit on the cmos chip vss - ground for the signal processing circuit on the cmos chip inp input reset voltage for the charge ampli er array on the cmos chip cf select input voltage that determines the feedback capacitance (cf) on the cmos chip. low gain (ce=16 nv/e - ) at 0 v, and high gain (ce=320 nv/e - ) at 5 v. case - this terminal is electrically connected to the package. therm output thermistor terminal for monitoring temperature inside the package te+, te- input power supply terminal for the thermoelectric cooler that cools the photodiode array ad-trig output digital signal for a/d conversion; positive polarity video output analog video signal; positive polarity vref input reset voltage for the offset compensation circuit on the cmos chip speci cations of one-stage te-cooler (ta=25 c, vdd=5 v, inp=4.5 v) parameter condition symbol min. typ. max. unit te-cooler allowable current ic max. - - 1.8 a te-cooler allowable voltage vc max. - - 5.0 v temperature difference * 8 ic=1.4 a t 40 - - c thermistor resistance rth 4.85 5.00 5.15 k thermistor power dissipation pth - - 0.2 mw * 8: this is a temperature difference between the surface of active area and the heat radiating portion of package.
ingaas linear image sensors g9201 to g9204 series 8 thermistor temperature characteristic kmirb0031ec kmirb0041eb current (a) (typ. heatsink 0.5 c/w) voltage (v) temperature difference (c) 012 0 0.5 1.5 4.0 3.5 3.0 2.5 1.0 2.0 -10 0 20 70 60 50 40 10 30 voltage temperature difference temperature (k) thermistor resistance () 240 250 260 270 280 290 10 3 10 4 10 5 300 one-stage te-cooler temperature characteristic a relation between the thermistor resistance and absolute temperature is expressed by the following equation. r1=r2 exp b (1/t1 - 1/t2) r1: resistance at t1 [k] r2: resistance at t2 [k] b : b constant (b=3200 k 2%) thermistor resistance = 5 k 3% (298 k)
cat. no. kmir1012e08 jul. 2015 dn www.hamamatsu.com hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184 u.s.a.: hamamatsu corporation: 360 foothill road, bridgewater, n.j. 08807, u.s.a., telephone: (1) 908-231-0960, fax: (1) 908-23 1-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 8152-375-0, fax: (49) 8152-265-8 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, telephone: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, united kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: torshamnsgatan 35 16440 kista, sweden, telephone: (46) 8-509-031-00, fax: (46) 8-5 09-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1 int. 6, 20020 arese (milano), italy, telephone: (39) 02-93581733 , fax: (39) 02-93581741 china: hamamatsu photonics (china) co., ltd.: b1201, jiaming center, no.27 dongsanhuan beilu, chaoyang district, beijing 100020 , china, telephone: (86) 10-6586-6006, fax: (86) 10-6586-2866 product specifications are subject to change without prior notice due to improvements or other reasons. this document has been carefully prepared and the information contained is believed to be accurate. in rare cases, however, there may be inaccuracies such as text errors. before using these products, always contact us for the delivery specification sheet to check the latest specifications. the product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. however, even if within the warranty period we accept absolutely no liability for any loss caused by natural d isasters or improper product use. copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. information described in this material is current as of july, 2015. ingaas linear image sensors g9201 to g9204 series 9 ac cable (100 to 240 v included with c7557-01 ) pc (usb 2.0/3.0) [windows 7 (32-bit, 64-bit)/ windows 8 (64-bit)/ windows 8.1 (64-bit)] c7557-01 usb cable (included with c7557-01) image sensor + multichannel detector head shutter* timing pulse dedicated cable (included with c7557-01) * shutter, etc. are not available. trig. te control i/o signal i/o power connection of related products kaccc0402ed electrostatic countermeasures this device has a built-in protection circuit against static electrical char ges. however, to prevent destroying the device with electrostatic charges, take countermeasures such as grounding yourself, the workbench and tools to prevent static discharges. also protect th is de- vice from surge voltages which might be caused by peripheral equipment. related information www.hamamatsu.com/sp/ssd/doc_en.html precautions ? disclaimer ? image sensors
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